900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






semi one

PE6018 Datasheet Preview

PE6018 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

N-Channel Enhancement Mode Power MOSFET
PE6018
Description
The PE6018 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 60V,ID =18A
RDS(ON) < 16m@ VGS=10V
(Typ:11.5m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
Power switching application
Hard switched and High frequency circuits
Uninterruptible power supply
Schematic diagram
Marking and pin assignment
SOP-8 top view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Limit
60
±20
18
12
35
2.5
Unit
V
V
A
A
A
W
WWW.SEMI-ONE.COM
Page 1




semi one

PE6018 Datasheet Preview

PE6018 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
PE6018
RθJc
50 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 - V
- - 1 μA
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=18A
VDS=10V,ID=10A
23
- 11.5
20 -
4
16
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 2800
- 430
-
-
PF
PF
Crss
- 190
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RL=1
VGS=10V,RGEN=3
VDS=30V,ID=10A,
VGS=10V
- 15
- 35
- 44
- 23
- 45
- 10
- 15
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=10A
- - 1.2
V
IS
-
- - 60
A
trr
TJ = 25°C, IF =10A
- 53
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 51
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25
WWW.SEMI-ONE.COM
Page 2


Part Number PE6018
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
PDF Download

PE6018 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PE6018 N-Channel Enhancement Mode Power MOSFET
semi one
2 PE601CA P&N-Channel Enhancement Mode MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy