PE60P25K Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET Description The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-25A RDS(ON) <45mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - High side switch for full bridge converter - DC/DC converter for LCD display Schematic diagram Marking and pin assignment TO-252 -2Ltop...