900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






semi one

PE60P25K Datasheet Preview

PE60P25K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

P-Channel Enhancement Mode Power MOSFET
Description
The PE60P25K uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge .This device is
well suited for high current load applications.
General Features
VDS =-60V,ID =-25A
RDS(ON) <45m@ VGS=-10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Application
High side switch for full bridge converter
DC/DC converter for LCD display
PE60P25K
Schematic diagram
Marking and pin assignment
TO-252 -2Ltop view
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-60
±20
-25
-17.7
-60
90
0.72
300
-55 To 150
Unit
V
V
A
A
A
W
W/
mJ
Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
1.4 /W
WWW.SEMI-ONE.COM
Page 1




semi one

PE60P25K Datasheet Preview

PE60P25K Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

PE60P25K
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-60 -
-
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=-60V,VGS=0V
- - -1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=-250μA
VGS=-10V, ID=-20A
-2 -2.6 -3.5
- 37
45
V
m
Forward Transconductance
gFS
VDS=-10V,ID=-10A
- 25
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
VDS=-30V,VGS=0V,
F=1.0MHz
- 3430
- 391
-
-
PF
PF
Crss
- 272
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 12
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=-30V, RL=1.5
VGS=-10V,RG=3
- 15
- 38
-
-
nS
nS
Turn-Off Fall Time
tf
- 15
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=-30,ID=-20A,
VGS=-10V
- 46
- 9.5
Qgd - 10.5
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-10A
-
-1.2 V
Diode Forward Current (Note 2)
IS
- - -25
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =- 10A
- 47
Qrr
di/dt = -100A/μs(Note3)
- 53
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25,VDD=-20V,VG=-10V,L=1mH,Rg=25,IAS=33A
WWW.SEMI-ONE.COM
Page 2


Part Number PE60P25K
Description P-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 5 Pages
PDF Download

PE60P25K Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PE60P25K P-Channel Enhancement Mode Power MOSFET
semi one





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy