ACE2341 Datasheet - ACE Technology

ACE2341 P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET The ACE2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited.

ACE2341 Features

* -20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exce

ACE2341_ACETechnology.pdf