ACE2010M - P-Channel MOSFET

ACE Technology

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Datasheet Details

Part number: ACE2010M
Manufacturer: ACE Technology
File Size: 300.16 KB
Datasheet: ACE2010M-ACETechnology.pdf
Description: P-Channel MOSFET

ACE2010M Product details

Description

The ACE2010 miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation..

Features

Low rDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VG.

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P-Channel MOSFET ACE Technology

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