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ADV
ADM7ND02
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
T S S O P-8
D1 1 S1 2 S1 3 G1 4
8 D2 7 S2 6 S2 5 G2
D1 G1
D2 G2
S1
S2
PRODUCT SUMMARY
VDSS
ID
20V
7A
RDS(ON) (mΩ) 21mΩ
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current(3)
TC=25°C
Mounted on Large Heat Sink
IDM
300μs Pulse Drain Current Tested⑴
ID
Continuous Drain Current
PD
Maximum Power Dissipation
1. Pulse width limited by maximum junction temperature.