SSC8K21GN3 Datasheet - AFSEMI

SSC8K21GN3 P-Channel Enhancement Mode MOSFET

SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. * Package Information KD AASG 12 3 4 SSC-1V0 Package：DFN3x2 http://www.a.

SSC8K21GN3 Features

* P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP 410Mv@0.5A ID -2A IO 1A

* Applications

* Li Battery Charging

* High Side DC/DC Converter

* High Side Driver for Brushless DC Motor

* Power Management in Portable, Battery Powere

SSC8K21GN3 Datasheet (537.99 KB)

SSC8K21GN3 Datasheet Preview — Preview of SSC8K21GN3 PDF

Datasheet Details

Part number:

SSC8K21GN3

Manufacturer:

AFSEMI

File Size:

537.99 KB

Description:

P-channel enhancement mode mosfet.

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