SSC8K21GN3 P-Channel Enhancement Mode MOSFET

Description

SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward vo.

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Datasheet Specifications

Part number: SSC8K21GN3
Manufacturer: AFSEMI
File Size: 537.99 KB
Datasheet: SSC8K21GN3-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP 410Mv@0.5A ID -2A IO 1A

Applications

* Li Battery Charging
* High Side DC/DC Converter
* High Side Driver for Brushless DC Motor
* Power Management in Portable, Battery Powered Devices
* Pin configuration Top View 8765 KKDD

SSC8K21GN3 Distributors

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SSC8K21GN3 P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8K21GN3-like datasheet