SSC8K23GN2 P-Channel Enhancement Mode MOSFET

Description

SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
IO 1A 654 KG S SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench techno.

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Datasheet Specifications

Part number: SSC8K23GN2
Manufacturer: AFSEMI
File Size: 237.66 KB
Datasheet: SSC8K23GN2-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID

Applications

* Bidirectional blocking switch;
* DC-DC conversion applications;
* Li-battery charging; -20V ±8V Schottky 180mR@-2V5 240mR@-1V8 -2A
* Pin configuration Top View VR IR VF 20V 35uA 410mV@0.5A

SSC8K23GN2 Distributors

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SSC8K23GN2 P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8K23GN2-like datasheet