SSC8K23GN2 Datasheet - AFSEMI

SSC8K23GN2 P-Channel Enhancement Mode MOSFET

IO 1A 654 KG S SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. A NC D 123 * Package Information ackage:DFN2x.

SSC8K23GN2 Features

* P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID

* Applications

* Bidirectional blocking switch;

* DC-DC conversion applications;

* Li-battery charging; -20V ±8V Schottky 180mR@-2V5 240mR@-1V8 -2A

* Pin configuration Top View VR IR VF 20V 35uA 410mV@0.5A

* General Descripti

SSC8K23GN2 Datasheet (237.66 KB)

SSC8K23GN2 Datasheet Preview — Preview of SSC8K23GN2 PDF

Datasheet Details

Part number:

SSC8K23GN2

Manufacturer:

AFSEMI

File Size:

237.66 KB

Description:

P-channel enhancement mode mosfet.

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SSC8K23GN2 P-Channel Enhancement Mode MOSFET AFSEMI

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