SSC8K23GN2 Datasheet - AFSEMI

SSC8K23GN2, P-Channel Enhancement Mode MOSFET

SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
IO 1A 654 KG S SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench techno.

Features

* P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID

Applications

* Bidirectional blocking switch;
* DC-DC conversion applications;
* Li-battery charging; -20V ±8V Schottky 180mR@-2V5 240mR@-1V8 -2A
* Pin configuration Top View VR IR VF 20V 35uA 410mV@0.5A

SSC8K23GN2-AFSEMI.pdf