SSC8K21JN3 Datasheet - AFSEMI

SSC8K21JN3 P-Channel Enhancement Mode MOSFET

SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. * Package Information DFN3X2-8L Pin connections SSC-1V0 http://www.afse.

SSC8K21JN3 Features

* P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 15uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF 370mV ID -2A IO 1A

* Applications

* Li Battery Charging

* High Side DC/DC Converter

* High Side Driver for Brushless DC Motor

* Power Management in Portable, Battery Powered Devices

SSC8K21JN3 Datasheet (279.33 KB)

SSC8K21JN3 Datasheet Preview — Preview of SSC8K21JN3 PDF

Datasheet Details

Part number:

SSC8K21JN3

Manufacturer:

AFSEMI

File Size:

279.33 KB

Description:

P-channel enhancement mode mosfet.

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SSC8K21JN3 P-Channel Enhancement Mode MOSFET AFSEMI

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