SSC8K21JN3 P-Channel Enhancement Mode MOSFET

Description

SSC8K21JN3 P-Channel Enhancement Mode MOSFET with Schottky Diode * .
SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward vo.

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Datasheet Specifications

Part number: SSC8K21JN3
Manufacturer: AFSEMI
File Size: 279.33 KB
Datasheet: SSC8K21JN3-AFSEMI.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 15uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF 370mV ID -2A IO 1A

Applications

* Li Battery Charging
* High Side DC/DC Converter
* High Side Driver for Brushless DC Motor
* Power Management in Portable, Battery Powered Devices
* Pin configuration

SSC8K21JN3 Distributors

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SSC8K21JN3 P-Channel Enhancement Mode MOSFET AFSEMI

AFSEMI SSC8K21JN3-like datasheet