SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET

Description

SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET * .
This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and oper.

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Datasheet Specifications

Part number: SSC9926GS1
Manufacturer: AFSEMI
File Size: 195.69 KB
Datasheet: SSC9926GS1-AFSEMI.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Features

* VDS VGS 20V ±12V RDSon TYP 21mR@4V5 22mR@3V8 26mR@2V5 ID 6A

Applications

* Package Information Applications
* Li-ion battery;
* Load swich;
* Battery charger Pin configuration Top View D1 D1 D2 D2 S1 G1 S2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www. afsemi. com 1/4 Analog Future SSC9926GS1
* Absolute Maximum Ratings @ TA = 25°C unless ot

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SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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