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SSC9926GS1 Datasheet - AFSEMI

SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET

This device combines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. * Package Information Applicati.

SSC9926GS1 Datasheet (195.69 KB)

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Datasheet Details

Part number:

SSC9926GS1

Manufacturer:

AFSEMI

File Size:

195.69 KB

Description:

Dual n-channel enhancement mode mosfet.

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SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET AFSEMI

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