AGM1810S Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 100V 8.5mΩ 16A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching

* Low Thermal resistance

* Application

* MB/VGA Vcore SOP8 Pin Configuration DDDD

* SMPS 2nd Synchronous Rec

AGM1810S

AGMSEMI

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Mosfet.

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AGM1810S MOSFET AGMSEMI

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