AGM18N20D Datasheet - AGMSEMI

MOSFET

* BVDSS RDSON ID 200V 120mΩ 18A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-252 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Applicatio

AGM18N20D

AGMSEMI

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Mosfet.

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