AGM18N10I MOSFET

Description

AGM18N10I * General .
The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

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Datasheet Specifications

Part number: AGM18N10I
Manufacturer: AGMSEMI
File Size: 898.34 KB
Datasheet: AGM18N10I-AGMSEMI.pdf
Description: MOSFET

Features

* BVDSS RDSON ID 100V 16mΩ 40A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching TO-251 Pin Configuration
* Low Thermal resistance

AGM18N10I Distributors

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AGM18N10I MOSFET AGMSEMI

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