AGM18N10I Datasheet, Mosfet, AGMSEMI

AGM18N10I Features

• Mosfet BVDSS RDSON ID 100V 16mΩ 40A
• Advance high cell density Trench technology
• Low RDS(ON) to minimize conductive loss
• Low Gate Charge for fast switching

PDF File Details

Part number:

AGM18N10I

Manufacturer:

AGMSEMI

File Size:

898.34kb

Download:

📄 Datasheet

Description:

Mosfet. The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Su

AGM18N10I Application

• Applications
• Features BVDSS RDSON ID 100V 16mΩ 40A
• Advance high cell density Trench technology
• Low RDS(ON) to

TAGS

AGM18N10I

AGMSEMI

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