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AGM18N10I - MOSFET

AGMSEMI

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Datasheet Details

Part number	AGM18N10I
Manufacturer	AGMSEMI
File Size	898.34 KB
Description	MOSFET
Datasheet	AGM18N10I-AGMSEMI.pdf

AGM18N10I Product details

Description

The AGM18N10I combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

Features

s BVDSS RDSON ID 100V 16mΩ 40A.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching TO-251 Pin Configuration.
Low Thermal resistance.

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Published: Dec 28, 2024 |