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AGM18N10I Datasheet - AGMSEMI

AGM18N10I MOSFET

AGM18N10I Features

* BVDSS RDSON ID 100V 16mΩ 40A

* Advance high cell density Trench technology

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-251 Pin Configuration

* Low Thermal resistance

* Application

* MB/VGA Vcore

* SMPS 2nd Synchronous Recti

AGM18N10I Datasheet (898.34 KB)

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Datasheet Details

Part number:

AGM18N10I

Manufacturer:

AGMSEMI

File Size:

898.34 KB

Description:

Mosfet.

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