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MRF581 NPN SILICON RF TRANSISTOR

MRF581 Description

MRF581 NPN SILICON RF TRANSISTOR .
The MRF581 is Designed for High current low Power Amplifier Applications up to 1. Low Noise.

MRF581 Features

* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Col

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Datasheet Details

Part number
MRF581
Manufacturer
ASI
File Size
26.57 KB
Datasheet
MRF581-ASI.pdf
Description
NPN SILICON RF TRANSISTOR

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NPN SILICON TRANSISTOR ASI
ASI MRF581-like datasheet