Part number:
MRF581
Manufacturer:
ASI
File Size:
26.57 KB
Description:
Npn silicon rf transistor.
* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C Leads 1 and 3 = Emitter 2 = Col
MRF581
ASI
26.57 KB
Npn silicon rf transistor.
📁 Related Datasheet
MRF580 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF581 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581 RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)
MRF5811LT1 NPN Silicon High Frequency Transistor (Motorola)
MRF5812 NPN Silicon RF Microwave Transistor (ASI)
MRF5812 Bipolar Junction Transistor (Advanced Power Technology)
MRF5812G Bipolar Junction Transistor (Advanced Power Technology)
MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581A RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)