Part number:
MRF5176
Manufacturer:
ASI
File Size:
90.33 KB
Description:
Npn silicon rf power transistor.
* PG = 10 dB Typical at 400 MHz
* Economical .280” Stud Package
* Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 60 V VCEO 33 V VEBO 4.0 V PDISS 30 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 6.0 °C/W PACKAGE STYLE .280 4L STUD
MRF5176
ASI
90.33 KB
Npn silicon rf power transistor.
📁 Related Datasheet
MRF517 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF517 NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
MRF5174 NPN RF POWER TRANSISTOR (ASI)
MRF5175 NPN RF POWER TRANSISTOR (ASI)
MRF5176 RF POWER TRANSISTOR (Motorola)
MRF5177 RF POWER TRANSISTOR (Motorola)
MRF5177A RF POWER TRANSISTOR (Motorola)
MRF511 HIGH FREQUENCY TRANSISTOR (Motorola)