Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5007/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.
Features
* thstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate
* to
* drain (Cgd), and gate
* to
* source
Applications
* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 Volt portable FM equipment.
* Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 7.0 Watts Power Gain = 10 dB Min Ef
