MRF5007R1 - N-CHANNEL BROADBAND RF POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5007/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 7.5 Volt portable FM equipment.
Guaranteed Performance at 512 MHz, 7.5 Volts Out
MRF5007R1 Features
* thstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate
* to
* drain (Cgd), and gate
* to
* source
