MRF5035 N-CHANNEL BROADBAND RF POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.

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Datasheet Specifications

Part number: MRF5035
Manufacturer: Motorola
File Size: 142.39 KB
Datasheet: MRF5035_Motorola.pdf
Description: N-CHANNEL BROADBAND RF POWER FET

Features

* r MOSFETs, Vds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input res

Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
* Guaranteed Performance at 512 MHz, 12.5 Volt Output Power
* 35 Watts P

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MRF5035 N-CHANNEL BROADBAND POWER FET Motorola

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