Datasheet Details
- Part number
- MRF5035
- Manufacturer
- Motorola
- File Size
- 142.39 KB
- Datasheet
- MRF5035_Motorola.pdf
- Description
- N-CHANNEL BROADBAND RF POWER FET
MRF5035 Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.
MRF5035 Features
* r MOSFETs, Vds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input res
MRF5035 Applications
* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.
* Guaranteed Performance at 512 MHz, 12.5 Volt Output Power
* 35 Watts P
📁 Related Datasheet
📌 All Tags
MRF5035 Stock/Price