* r MOSFETs, Vds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input res
MRF5035
Motorola
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N-channel broadband rf power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhan.
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