MRF5035 Datasheet - Motorola

MRF5035 N-CHANNEL BROADBAND RF POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. Guaranteed Performance at 512 MHz, 12.5 Volt O.

MRF5035 Features

* r MOSFETs, Vds(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input res

MRF5035 Datasheet (142.39 KB)