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MRF5007 - N-CHANNEL BROADBAND RF POWER FET

MRF5007 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5007/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.

MRF5007 Features

* thstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate
* to
* drain (Cgd), and gate
* to
* source

MRF5007 Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 Volt portable FM equipment.
* Guaranteed Performance at 512 MHz, 7.5 Volts Output Power = 7.0 Watts Power Gain = 10 dB Min Ef

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Datasheet Details

Part number
MRF5007
Manufacturer
Motorola
File Size
161.41 KB
Datasheet
MRF5007_Motorola.pdf
Description
N-CHANNEL BROADBAND RF POWER FET

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N-CHANNEL BROADBAND POWER FET Motorola
Motorola MRF5007-like datasheet

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