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MRF5003 - N-CHANNEL BROADBAND RF POWER FET

MRF5003 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N *Channel Enhan.

MRF5003 Features

* 1 µF, 100 mil Chip C14 160 pF, 100 mil Chip R1 43 Ω, 0.1 W Chip Resistor R2 1000 Ω, 0.1 W Chip Resistor R3 10 kΩ Potentiometer R4 3000 Ω, 0.1 W Chip Resistor L1 5 Turns, 0.126″ ID, #20 AWG Enamel Z1 to Z13 See Photomaster D1 1N4734 Motorola Zener Board
* G10, 1/32″ Input/Output Connectors

MRF5003 Applications

* at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large
* signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.
* Guaranteed Performance at 512 MHz, 7.5 Volts Output Pow

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Datasheet Details

Part number
MRF5003
Manufacturer
Motorola
File Size
206.20 KB
Datasheet
MRF5003_Motorola.pdf
Description
N-CHANNEL BROADBAND RF POWER FET

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N-CHANNEL BROADBAND POWER FET Motorola
Motorola MRF5003-like datasheet

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