Part number:
MRF581AG
Manufacturer:
File Size:
142.47 KB
Description:
Rf & microwave discrete low power transistors.
MRF581AG Datasheet (142.47 KB)
* Low Noise - 2.5 dB @ 500 MHZ
* Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
* Ftau - 5.0 GHz @ 10v, 75mA
* Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (
MRF581AG Datasheet (142.47 KB)
MRF581AG
142.47 KB
Rf & microwave discrete low power transistors.
📁 Related Datasheet
MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581A RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)
MRF581 NPN SILICON RF TRANSISTOR (ASI)
MRF581 HIGH FREQUENCY TRANSISTOR (Motorola)
MRF581 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581 RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)
MRF5811LT1 NPN Silicon High Frequency Transistor (Motorola)
MRF5812 NPN Silicon RF Microwave Transistor (ASI)
MRF5812 Bipolar Junction Transistor (Advanced Power Technology)
MRF5812G Bipolar Junction Transistor (Advanced Power Technology)
