MRF5812G Datasheet, transistor equivalent, Advanced Power Technology

MRF5812G Features

• Transistor
• Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
   

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Part number:

MRF5812G

Manufacturer:

Advanced Power Technology

File Size:

147.36kb

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📄 Datasheet

Description:

Bipolar junction transistor. Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO

TAGS

MRF5812G

Advanced Power Technology

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