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MRF5812G

Bipolar Junction Transistor

MRF5812G Features

* Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix

* Tape and Reel, 500 units R2 suffix

* Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low po

MRF5812G General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 200 Unit Vdc Vdc Vdc mA Thermal Data P D To.

MRF5812G Datasheet (147.36 KB)

Preview of MRF5812G PDF

Datasheet Details

Part number:

MRF5812G

Manufacturer:

Advanced Power Technology

File Size:

147.36 KB

Description:

Bipolar junction transistor.

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TAGS

MRF5812G Bipolar Junction Transistor Advanced Power Technology

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