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MRF553G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF553G Features

* Specified @ 12.5 V, 175 MHz Characteristics

* Output Power = 1.5 W

* Minimum Gain = 11.5 dB

* Efficiency 60% (Typ)

* Cost Effective PowerMacro Package

* Electroless Tin Plated Leads for Improved Solderability Power Macro DESCRIPTION: Designed prima

MRF553G General Description

Designed primarily for wideband large signal stages in the VHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ .

MRF553G Datasheet (139.60 KB)

Preview of MRF553G PDF

Datasheet Details

Part number:

MRF553G

Manufacturer:

Advanced Power Technology

File Size:

139.60 KB

Description:

Rf & microwave discrete low power transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553 MRF5.

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MRF553G MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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