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MRF581

RF and Microwave Discrete Low Power Power Transistors

MRF581 Features

* Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (

MRF581 General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal.

MRF581 Datasheet (265.54 KB)

Preview of MRF581 PDF

Datasheet Details

Part number:

MRF581

Manufacturer:

Advanced Power Technology

File Size:

265.54 KB

Description:

Rf and microwave discrete low power power transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSIST.

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MRF581 and Microwave Discrete Low Power Power Transistors Advanced Power Technology

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