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MRF581 Datasheet - Advanced Power Technology

MRF581 RF and Microwave Discrete Low Power Power Transistors

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal.

MRF581 Datasheet (265.54 KB)

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Datasheet Details

Part number:

MRF581

Manufacturer:

Advanced Power Technology

File Size:

265.54 KB

Description:

Rf and microwave discrete low power power transistors.

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MRF581 and Microwave Discrete Low Power Power Transistors Advanced Power Technology

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