MRF557G, MRF557 Datasheet - Advanced Power Technology

MRF557G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA The.

MRF557G Features

* Specified @ 12.5 V, 870 MHz Characteristics

* Output Power = 1.5 W

* Minimum Gain = 8 dB

* Efficiency 60% (Typ)

* Cost Effective PowerMacro Package

* Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G

* G Denotes RoHS Complia

MRF557-AdvancedPowerTechnology.pdf

MRF557G Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF557G, MRF557. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF557G, MRF557

Manufacturer:

Advanced Power Technology

File Size:

146.05 KB

Description:

Rf & microwave discrete low power transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF557G, MRF557.
Please refer to the document for exact specifications by model.

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MRF557G MRF557 MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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