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MRF559

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF559 Features

* Specified @ 12.5 V, 870 MHz Characteristics

* Output Power = .5 W

* Minimum Gain = 8.0 dB

* Efficiency 50%

* Cost Effective Macro X Package

* Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideba

MRF559 General Description

Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipati.

MRF559 Datasheet (135.19 KB)

Preview of MRF559 PDF

Datasheet Details

Part number:

MRF559

Manufacturer:

Advanced Power Technology

File Size:

135.19 KB

Description:

Rf & microwave discrete low power transistors.

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MRF559 MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology

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