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MRF581G

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581G Features

* Low Noise - 2.5 dB @ 500 MHZ

* Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz

* Ftau - 5.0 GHz @ 10v, 75mA

* Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (

MRF581G General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current MRF581 MRF581A 18 15 30 2.5 200 Unit Vdc Vdc Vdc .

MRF581G Datasheet (142.47 KB)

Preview of MRF581G PDF

Datasheet Details

Part number:

MRF581G

Manufacturer:

Microsemi ↗

File Size:

142.47 KB

Description:

Rf & microwave discrete low power transistors.

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MRF581G MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi

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