AT28HC256N - High-speed Parallel EEPROM

Name: AT28HC256N
SKU: AT28HC256N-562308

ATMEL Corporation

Datasheet Details

The AT28HC256N is a high-performance electrically erasable and programmable read only memory.

Fast Read Access Time.
90 ns.
Automatic Page Write Operation.
Internal Address and Data Latches for 64 Bytes.
Internal Control Timer Fast Write Cycle Times.
Page Write Cycle Time: 3 ms Maximum.
1 to 64-byte Page Write Operation Low Power Dissipation: 300 µA Standby Current (CMOS) Hardware and Software Data Protection DATA Polling for End of Write Detecti.

📁 AT28HC256N Similar Datasheet

AT28C010 - 1-megabit (128K x 8) Paged Parallel EEPROM (ATMEL)
AT28C010-12DK - Space 1-MBit (128K x 8) Paged Parallel EEPROM (ATMEL)
AT28C16-T - 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory (ATMEL)
AT28C64B - 64-Kbit (8K x 8) Industrial Parallel EEPROM (Microchip)
AT20-0106 - Digital Attenuator/ 50 dB/ 6-Bit/ TTL Driver/ DC - 2 GHz (Tyco Electronics)
AT20-0107 - Digital Attenuator/ 31.5 dB/ 6-Bit/ TTL Driver/ DC - 2.0 GHz (Tyco Electronics)
AT20-0263 - Digital Attenuator/ 31 dB/ 5-Bit/ TTL Driver/ DC - 2 GHz (Tyco Electronics)
AT20-0273 - Digital Attenuator/ 32 dB/ 2-Bit/ TTL Driver/ DC - 2 GHz (Tyco Electronics)

Other Datasheets by ATMEL Corporation

AT28HC256 - 256K (32K x 8) High-speed Parallel EEPROM
AT28HC64B - 64K (8K x 8) High-speed Parallel EEPROM
AT28HC64BF - 64K (8K x 8) High Speed Parallel EEPROM
AT28BV16 - 16K 2K x 8 Battery-Voltage CMOS E2PROM
AT28BV256 - 256K (32K x 8) Battery-Voltage Parallel EEPROMs
AT28BV64 - 64K (8K x 8) Battery-Voltage Parallel EEPROMs

Published: Dec 4, 2006 |