AP1RA03GMT-HF-3 Datasheet - Advanced Power Electronics

AP1RA03GMT-HF-3, N-channel Enhancement mode Power MOSFET

Advanced Power Electronics Corp.AP1RA03GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement SO-8 Compatible with Heatsink Low .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

Applications

* with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile. S S D D D D S G PMPAK®5x6 Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source

AP1RA03GMT-HF-3-AdvancedPowerElectronics.pdf