AP4435 Datasheet (Advanced Power Electronics) - 30 P-Channel Enhancement-Mode MOSFET

AP4435, 30 P-Channel Enhancement-Mode MOSFET

30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID L