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AP4435 Datasheet - Advanced Power Electronics

AP4435 30 P-Channel Enhancement-Mode MOSFET

30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-9.1A = 21m RDS(ON), Vgs@-4.5V, Ids@-6.9A = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID L.

AP4435-AdvancedPowerElectronics.pdf

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Datasheet Details

Part number:

AP4435

Manufacturer:

Advanced Power Electronics

File Size:

96.04 KB

Description:

30 p-channel enhancement-mode mosfet.

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AP4435 AP4435 P-Channel Enhancement-Mode MOSFET Advanced Power Electronics

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