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AP4435A - 30V P-Channel Enhancement Mode MOSFET

AP4435A Description

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AP4435A 30V P-Channel Enhancement Mode MOSFET The AP4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio.

AP4435A Features

* VDS = -30V ID =-10.5A RDS(ON)

AP4435A Applications

* , should be limited by total power dissipation. 2 AP4435A Rve1.3 -ID Drain Current (A) Typical Characteristics 12 AP4435A 30V P-Channel Enhancement Mode MOSFET 10 VGS=-10V VGS=-7V 8 VGS=-5V 6 VGS=-4.5V 4 VGS=-3V 2 0 0 0.25 0.5 0.75 1 -VDS , Drain-to-Source Voltage (V) Fig.1 Typi

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Datasheet Details

Part number
AP4435A
Manufacturer
APM
File Size
1.90 MB
Datasheet
AP4435A-APM.pdf
Description
30V P-Channel Enhancement Mode MOSFET

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30V P-Channel Enhancement Mode MOSFET APM
APM AP4435A-like datasheet

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