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AP6677GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP6677GH RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number
AP6677GH
Manufacturer
Advanced Power Electronics
File Size
168.38 KB
Datasheet
AP6677GH_AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Dra

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