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AP9575J, AP9575H - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9575J Description

AP9575H/J Advanced Power Electronics Corp.▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic G S D.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC.

AP9575J Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575J) is available for low-profile applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-So

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This datasheet PDF includes multiple part numbers: AP9575J, AP9575H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP9575J, AP9575H
Manufacturer
Advanced Power Electronics
File Size
107.56 KB
Datasheet
AP9575H_AdvancedPowerElectronics.pdf
Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9575J, AP9575H.
Please refer to the document for exact specifications by model.

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Advanced Power Electronics AP9575J-like datasheet