AP9918GJ

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

AP9918GJ General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Para.

AP9918GJ Datasheet (80.16 KB)

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Part number:

AP9918GJ

Manufacturer:

Advanced Power Electronics

File Size:

80.16 KB

Description:

N-channel enhancement mode power mosfet.
AP9918GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Surface mo.

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AP9918GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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AP9918GJ General Description

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