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AP9971GM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs

AP9971GM-HF-3 Description

Advanced Power Electronics Corp.AP9971GM-HF-3 Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switchi.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP9971GM-HF-3 Applications

* SO-8 S1 S2 G1 Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 3 3 Rating 60 ±25 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Cur

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Datasheet Details

Part number
AP9971GM-HF-3
Manufacturer
Advanced Power Electronics
File Size
89.32 KB
Datasheet
AP9971GM-HF-3-AdvancedPowerElectronics.pdf
Description
Dual N-channel Enhancement-mode Power MOSFETs

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📌 All Tags

Dual N-channel Enhancement-mode Power MOSFETs Advanced Power Electronics
Advanced Power Electronics AP9971GM-HF-3-like datasheet