AP9997AGH-HF-3 Datasheet - Advanced Power Electronics

AP9997AGH-HF-3, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp.AP9997AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

Applications

* such as medium-power DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 120 + 20 8.8 5.6 30 34.7 0.28

AP9997AGH-HF-3-AdvancedPowerElectronics.pdf