AP9997GP-HF Datasheet - Advanced Power Electronics

AP9997GP-HF, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

Applications

* G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 11 7 30 34.7 -55 to 150 -55 to 150

AP9997GP-HF_AdvancedPowerElectronics.pdf