Datasheet4U Logo Datasheet4U.com

AP9997GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997GP-HF Description

AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP9997GP-HF Applications

* G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 11 7 30 34.7 -55 to 150 -55 to 150

📥 Download Datasheet

Preview of AP9997GP-HF PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
AP9997GP-HF
Manufacturer
Advanced Power Electronics
File Size
114.28 KB
Datasheet
AP9997GP-HF_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

📁 Related Datasheet

  • AP9997GH - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • AP9997GK - N-Channel 100V MOSFET (VBsemi)
  • AP9926A - 20V N+N-Channel Enhancement Mode MOSFET (APM)
  • AP9971AGM - Dual N-Channel MOSFET (VBsemi)
  • AP9971GH - N-Channel MOSFET (VBsemi)
  • AP9971GI-HF - N-Channel 60V MOSFET (VBsemi)
  • AP9972GS - N-Channel 60V MOSFET (VBsemi)
  • AP9974AGP - N-Channel 60V MOSFET (VBsemi)

📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP9997GP-HF-like datasheet