APT1004R2BN Datasheet - Advanced Power Technology

APT1004R2BN MOSFET

D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1004R2BN 1000V 4.0A 4.20Ω All Ratings: TC = 25°C unless otherwise specified. APT 1004RBN APT 1004R2BN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 4.4 17.6 ± 30 180 1.44 1000 4.0 16 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Fact.

APT1004R2BN_AdvancedPowerTechnology.pdf