10 views

APT1004RGN Datasheet - Advanced Power Technology

APT1004RGN MOSFET

D G S TO-257 APT1004RGN 1000V 3.3A 4.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT1004RGN UNIT Volts Amps 1000 3.3 13.2 ±30 100 0.8 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperatur.

APT1004RGN Datasheet (50.26 KB)