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APT1004R2KN Datasheet - Advanced Power Technology

APT1004R2KN MOSFET

D TO-220 G S APT1004RKN APT1004R2KN 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol Parameter V DSS ID IDM V GS PD Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C, Derate Above 25°C 1 All Ratings: T C = 25°C unless otherwise specified. APT1004R2KN 1000 3.5 14.0 ±30 125 -55 to 150 APT1004RKN 1000 3.6 14.4 UNIT Volts Amps Amps Volts Watts.

APT1004R2KN Datasheet (51.05 KB)