APT1004RCN Datasheet - Advanced Power Technology

APT1004RCN MOSFET

D TO-254 G S APT1004RCN 1000V 3.6A 4.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT1004RCN UNIT Volts Amps 1000 3.6 14.4 ±30 125 1.0 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperatur.

APT1004RCN_AdvancedPowerTechnology.pdf