Datasheet4U Logo Datasheet4U.com

VFT30-28 VHF POWER MOSFET

VFT30-28 Description

www.DataSheet.co.kr VFT30-28 VHF POWER MOSFET N-Channel Enhancement Mode .
The VFT30-28 is a gold metallized NChannel enhancement mode MOSFET, intended for use in 28VDC large signal applications up to 400MHz.

VFT30-28 Features

* PG = 14 dB Typ. at 30 W /175MHz
* 10:1 Load VSWR Capability
* Omnigold™ Metalization System F G C D E S I GH MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ TSTG θJC 5.0 A 65 V 65 V ± 40 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G

📥 Download Datasheet

Preview of VFT30-28 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • VFT3045BP - Trench MOS Barrier Schottky Rectifier (Vishay)
  • VFT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VFT3045CBP - Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
  • VFT3060C - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VFT3060C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VFT3060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VFT3060G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VFT3080C - Dual Trench MOS Barrier Schottky Rectifier (Vishay)

📌 All Tags

Advanced Semiconductor VFT30-28-like datasheet