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VFT3045CBP Trench MOS Barrier Schottky Rectifier Rectifier

VFT3045CBP Description

www.DataSheet.co.kr New Product VFT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection U.

VFT3045CBP Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

VFT3045CBP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.39 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rati

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Datasheet Details

Part number
VFT3045CBP
Manufacturer
Vishay ↗
File Size
138.84 KB
Datasheet
VFT3045CBP_Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier Rectifier

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Trench MOS Barrier Schottky Rectifier Rectifier Vishay
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