* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog
VFT3045CBP Datasheet (138.84 KB)
VFT3045CBP
138.84 KB
Trench mos barrier schottky rectifier rectifier.
www.DataSheet.co.kr New Product VFT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection U.
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