* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog
VFT3080C Datasheet (136.23 KB)
VFT3080C
136.23 KB
Dual trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A .
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