VFT1045C Datasheet - Vishay Siliconix

VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VFT1045C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Halog

Datasheet Details

VFT1045C

97.80 KB

Dual low-voltage trench mos barrier schottky rectifier.

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