VFT1045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

VFT1045C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Halog

VFT1045C Datasheet (97.80 KB)

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Datasheet Details

Part number:

VFT1045C

Manufacturer:

Vishay ↗ Siliconix

File Size:

97.80 KB

Description:

Dual low-voltage trench mos barrier schottky rectifier.
New Product VFT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .

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VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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