VFT1045C Datasheet - Vishay Siliconix

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VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

New Product VFT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .

VFT1045C_VishaySiliconix.pdf

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Datasheet Details

Part number:

VFT1045C

Manufacturer:

Vishay ↗ Siliconix

File Size:

97.80 KB

Description:

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94

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VFT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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