VFT1080S Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product VFT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS .

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Datasheet Specifications

Part number: VFT1080S
Manufacturer: Vishay ↗
File Size: 135.55 KB
Datasheet: VFT1080S_Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Ha

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 80 V 100 A 0.60 V 150 °C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 9

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VFT1080S Trench MOS Barrier Schottky Rectifier Vishay

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