VFT1080S

Trench MOS Barrier Schottky Rectifier

Vishay

VFT1080S Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 3

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Ha

VFT1080S Datasheet (135.55 KB)

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Datasheet Details

Part number:

VFT1080S

Manufacturer:

Vishay ↗

File Size:

135.55 KB

Description:

Trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS .

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VFT1080S Trench MOS Barrier Schottky Rectifier Vishay

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VFT1080S Features

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