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VFT10200C-E3

Trench MOS Barrier Schottky Rectifier

VFT10200C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-22

VFT10200C-E3 Datasheet (154.89 KB)

Preview of VFT10200C-E3 PDF

Datasheet Details

Part number:

VFT10200C-E3

Manufacturer:

Vishay ↗

File Size:

154.89 KB

Description:

Trench mos barrier schottky rectifier.
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V.

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VFT10200C-E3 Trench MOS Barrier Schottky Rectifier Vishay

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