* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
* Halog
VFT1060C Datasheet (135.69 KB)
VFT1060C
135.69 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product VFT1060C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V.
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