VFT1045CBP

Trench MOS Barrier Schottky Rectifier

Vishay

VFT1045CBP Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Halog

VFT1045CBP Datasheet (139.98 KB)

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Datasheet Details

Part number:

VFT1045CBP

Manufacturer:

Vishay ↗

File Size:

139.98 KB

Description:

Trench mos barrier schottky rectifier.
New Product VFT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V .

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VFT1045CBP Trench MOS Barrier Schottky Rectifier Vishay

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