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VFT1060C-E3

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VFT1060C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VFT1060C-E3 Datasheet (196.02 KB)

Preview of VFT1060C-E3 PDF

Datasheet Details

Part number:

VFT1060C-E3

Manufacturer:

Vishay ↗

File Size:

196.02 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.
VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifie.

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VFT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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