VFT2045C Datasheet - Vishay Siliconix

VFT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VFT2045C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106

* Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

* Halog

Datasheet Details

VFT2045C

97.74 KB

Dual low-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VFT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)

VFT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2060G Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VFT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VFT2045C Distributor