* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VFT2060G Datasheet (125.23 KB)
VFT2060G
125.23 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com VT2060G, VFT2060G, VBT2060G, VIT2060G Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
📁 Related Datasheet
VFT2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2045BP Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT2045C-M3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2045CBP Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VFT2080C Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2080C-E3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
VFT2080S Trench MOS Barrier Schottky Rectifier (Vishay)
